HRL Achieves Manufacturing Milestone on 40-nm GaN-on-SiC

Got story updates? Submit your updates here. ›

HRL Laboratories, a research and development company based in Malibu, California, has announced a major manufacturing milestone in the production of 40-nanometer gallium nitride (GaN) transistors on silicon carbide (SiC) substrates. This breakthrough in semiconductor technology could enable significant improvements in power efficiency and performance for a wide range of electronic devices.

Why it matters

GaN-on-SiC technology is seen as a critical enabler for the next generation of power electronics, radio frequency (RF) devices, and high-performance computing applications. Achieving this 40-nm manufacturing milestone puts HRL at the forefront of this emerging field and could lead to major advancements in areas like electric vehicles, 5G infrastructure, and renewable energy systems.

The details

HRL's 40-nm GaN-on-SiC transistors were fabricated using the company's proprietary manufacturing processes and are designed to offer superior power density, efficiency, and thermal management compared to traditional silicon-based semiconductors. This breakthrough builds on HRL's previous work in GaN-on-SiC technology and represents a significant step towards commercializing this advanced material system.

• HRL Laboratories announced the 40-nm GaN-on-SiC manufacturing milestone on April 8, 2026.

What’s next

HRL plans to continue optimizing its 40-nm GaN-on-SiC manufacturing processes and work closely with industry partners to integrate this technology into a wide range of commercial and industrial applications.